Inverse Class-F Linear PA for Middle Band 5G Applications

DOI

抄録

It is known that the inverse class-F PA (power amplifier) can lower the Vknee (knee voltage) and improve the efficiency as compared with the class-F PA. However, since the Vknee is low, the linearity tends to deteriorate due to the influence of the non-linear characteristic of the capacitance between the base and collector of the transistor. In order to improve the linearity, we propose a matching circuit that adjusts the phase of the 2nd harmonic load impedance. It does not apply an unnecessarily low voltage to the collector. We make a prototype of a differential PA module compatible with the 1.735 GHz – 2.0 GHz band and applied the proposed matching circuit. As a result, it was confirmed that the swelling that occurred in the ACLR (adjacent channel leakage ratio) characteristics can be suppressed and the output power that satisfied ACLR<-34 dBc can be increased (5 dB).

収録刊行物

  • IEICE Proceeding Series

    IEICE Proceeding Series 73 719-721, 2022-11-29

    The Institute of Electronics, Information and Communication Engineers

キーワード

詳細情報 詳細情報について

  • CRID
    1390577376031517568
  • DOI
    10.34385/proc.73.if-a14
  • ISSN
    21885079
  • 本文言語コード
    en
  • データソース種別
    • JaLC
  • 抄録ライセンスフラグ
    使用不可

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