A Ku-band transmitter front-end in 65-nm CMOS with >45-dBc image-rejection ratio and >43-dBc LOFT suppression
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- Duan Haipeng
- School of Information Science and Engineering, Southeast University National Mobile Communications Research Laboratory, Southeast University Purple Mountain Laboratories
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- Chen Qin
- School of Information Science and Engineering, Southeast University National Mobile Communications Research Laboratory, Southeast University Purple Mountain Laboratories
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- Wang Xuan
- School of Information Science and Engineering, Southeast University National Mobile Communications Research Laboratory, Southeast University Purple Mountain Laboratories
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- Cheng Depeng
- Purple Mountain Laboratories
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- Chen Xin
- School of Information Science and Engineering, Southeast University Purple Mountain Laboratories
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- Wu Xu
- School of Information Science and Engineering, Southeast University National Mobile Communications Research Laboratory, Southeast University Purple Mountain Laboratories
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- Wang Dongming
- School of Information Science and Engineering, Southeast University National Mobile Communications Research Laboratory, Southeast University Purple Mountain Laboratories
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- Li Lianming
- School of Information Science and Engineering, Southeast University National Mobile Communications Research Laboratory, Southeast University Purple Mountain Laboratories
Abstract
<p>This paper presents a fully integrated Ku-band transmitter front-end with high image rejection ratio (IRR), local oscillator feedthrough (LOFT) suppression, gain and output power for point-to-point (P2P) communication. To avoid the bulky off-chip image-rejection filter, the Hartley transmitter structure is employed, in which frequency plan is undertaken to improve the IRR and LOFT performance, and a two-stage polyphase filter (PPF) and an in/quadrature-phase (I/Q) Gilbert mixer are utilized to improve the IRR further. With the capacitive neutralization and transformer-based series power combining techniques, a two-stage power amplifier (PA) is used to obtain high gain and output power. In the LO buffer, a flexible phase inverting cascode structure is used to achieve reliable up-sideband operation, and the inductive peaking technique and cross-coupled transistor pair are employed to promote the LO swing. Fabricated in a 65-nm CMOS process, the proposed Ku-band transmitter occupies a chip area of 0.98mm2, and consumes 304-mW power consumption from a 1.2-V supply voltage. With measurements, over 15.8-17.9-GHz radio frequency (RF) bandwidth, the transmitter achieves an IRR and LOFT suppression ratio of 45-55 and 43-52dBc, respectively. Moreover, it exhibits a conversion gain of 28.5dB, an output 1-dB compression point (OP1dB) of 13.3dBm and a saturated output power (Psat) of 16dBm.</p>
Journal
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- IEICE Electronics Express
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IEICE Electronics Express 20 (15), 20230226-20230226, 2023-08-10
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390578603771937792
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- ISSN
- 13492543
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed