Changing the Voltage of the p-n Junction in a Magnetic Field
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- Gulyamov Gafur
- Department of Advanced Physics, Namangan Engineering Construction Institute
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- Mukhitdinova Feruza
- Department of Advanced Physics, Namangan Engineering Construction Institute
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- Majidova Gulnoza
- Department of Advanced Physics, Namangan Engineering Construction Institute
Abstract
<p>In this paper, the current-voltage (I-V) characteristic and volt-tesla (V-T) characteristic of diodes with a p-n junction under the appearance of a magnetic field are considered. Analysis of the experimentally obtained magnetic diodes I-V characteristic and V-T characteristic with p-n junction, new formulas were derived for calculating the I-V characteristic and V-T characteristics. Based on the developed theoretical formulas, new I-V and V-T characteristics were calculated and graphs were obtained. Theoretically obtained graphs were compared with the experimental ones and similarities were found. Theoretical expressions have been developed to calculate the theoretical I-V and V-T characteristics. Theoretically, they were based on two reasons and their consistency with experience was shown. </p>
Journal
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology 21 (4), 273-277, 2023-05-27
The Japan Society of Vacuum and Surface Science
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Keywords
Details 詳細情報について
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- CRID
- 1390578979237822080
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- ISSN
- 13480391
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Allowed