Frontiers of nitride semiconductor crystal growth using molecular beam epitaxy

DOI
  • ARAKI Tsutomu
    Department of Electrical and Electronic Engineering, College of Science and Engineering, Ritsumeikan University
  • DEURA Momoko
    Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University
  • FUJII Takashi
    Research Organization of Science and Technology, Ritsumeikan University
  • MOURI Shinichiro
    Department of Electrical and Electronic Engineering, College of Science and Engineering, Ritsumeikan University

Bibliographic Information

Other Title
  • 分子線エピタキシ法を用いた窒化物半導体結晶成長の最前線

Abstract

<p>Molecular beam epitaxy (MBE) has long been studied and developed as one of the nitride semiconductor crystal growth methods along with metalorganic vapor deposition and hydride vapor deposition. In this paper, we introduce the authors' recent achievements in nitride semiconductor crystal growth by MBE, which is characterized by low-temperature growth and nitrogen plasma source. Here, GaN direct growth on ScAlMgO4 substrate, threading dislocation reduction in InN grown with in situ surface modification by nitrogen plasma irradiation and InN remote epitaxy using graphene will be introduced.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 92 (10), 622-626, 2023-10-01

    The Japan Society of Applied Physics

Details 詳細情報について

  • CRID
    1390579134186045184
  • DOI
    10.11470/oubutsu.92.10_622
  • ISSN
    21882290
    03698009
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

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