Phase Equilibria in Aluminium–Ruthenium–Silicon System near 1200 Kelvin

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  • Kitahara Koichi
    Department of Materials Science and Engineering, School of Electrical and Computer Engineering, National Defense Academy Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo
  • Takakura Hiroyuki
    Division of Applied Physics, Faculty of Engineering, Hokkaido University
  • Iwasaki Yutaka
    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo National Institute for Materials Science (NIMS)
  • Kimura Kaoru
    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo National Institute for Materials Science (NIMS)

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<p>A narrow-gap semiconductor with a complex crystal structure was recently discovered in the Al–Ru–Si system. To determine the homogeneity range of the semiconductor phase and further discover new phases, phase equilibria in the Al–Ru–Si system near 1200 K were investigated through prolonged-annealing experiments. Eleven new ternary phases including two incommensurate composite-crystalline and an icosahedral quasicrystalline phases were identified using powder and single-crystal X-ray diffraction, and their compositions at two-phase and three-phase equilibria were evaluated by means of electron-probe X-ray microanalysis. On the basis of the data obtained in this study and those adopted from the literature, a tentative isothermal section of the Al–Ru–Si equilibrium phase diagram near 1200 K was drawn.</p>

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  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 65 (1), 18-26, 2024-01-01

    公益社団法人 日本金属学会

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