Exploring novel compound semiconductor nanowires

DOI

Bibliographic Information

Other Title
  • 化合物半導体ナノワイヤの新材料開拓

Abstract

<p>Using molecular beam epitaxial crystal growth, we have synthesized large-capacity, high-quality compound semiconductor GaAs-based nanowires on a 2-inch silicon substrate. In addition, we explored novel nanowires materials by the growth of GaInNAsBi compounds, crystal polymorphism including stable zincblende and metastable hexagonal structure, and material conversion by oxidation. These materials show various functions as a light source in the near-infrared band or white light, and show nonlinear optical effects.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 93 (1), 24-28, 2024-01-01

    The Japan Society of Applied Physics

Details 詳細情報について

  • CRID
    1390580143069415552
  • DOI
    10.11470/oubutsu.93.1_24
  • ISSN
    21882290
    03698009
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

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