Exploring novel compound semiconductor nanowires
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- ISHIKAWA Fumitaro
- Research Center for Integrated Quantum Electronics, Hokkaido University
Bibliographic Information
- Other Title
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- 化合物半導体ナノワイヤの新材料開拓
Abstract
<p>Using molecular beam epitaxial crystal growth, we have synthesized large-capacity, high-quality compound semiconductor GaAs-based nanowires on a 2-inch silicon substrate. In addition, we explored novel nanowires materials by the growth of GaInNAsBi compounds, crystal polymorphism including stable zincblende and metastable hexagonal structure, and material conversion by oxidation. These materials show various functions as a light source in the near-infrared band or white light, and show nonlinear optical effects.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 93 (1), 24-28, 2024-01-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390580143069415552
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- ISSN
- 21882290
- 03698009
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- Text Lang
- ja
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- Data Source
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- JaLC
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- Abstract License Flag
- Disallowed