Investigation of Threshold Voltage Definition for Nanosheet MOSFETs by Using Quantum Drift Diffusion Model

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  • Takanishi Ryo
    Graduate School of Science and Technology, Kyoto Institute of Technology
  • Hiroki Akira
    Graduate School of Science and Technology, Kyoto Institute of Technology

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  • 量子ドリフト拡散モデルによるナノシートMOSFETのしきい値電圧定義の検討

Abstract

<p>In this paper, we investigate the analytical definition of the threshold voltage of nanosheet MOSFETs using the quantum drift diffusion (QDD) model. The QDD model is a device simulator that can simulate the quantum confinement effects in the inversion layer of advanced MOSFETs. We have analyzed three-dimensional characteristics of a nanosheet MOSFET with a sheet width of 10 nm, a sheet thickness of 4 nm, and an equivalent oxide thickness of 0.35 nm in the QDD model. We have investigated the analytical definition of threshold voltage in the nanosheet MOSFET using the QTH definition proposed by Takeuchi et al. and the 2ψB definition that has been widely used in the past. For the nanosheet MOSFET, the threshold voltage in the QTH definition is 0.40 V, and the threshold voltage in the 2ψB definition is obtained to be 0.19 V. The threshold voltage by electrical definition is 0.36 V. The difference is 0.04 V by the QTH definition, and 0.17 V by the 2ψB definition. In nanosheet MOSFETs, the threshold voltage obtained by the QTH definition is closer to the threshold voltage obtained by the electrical definition than the threshold voltage obtained by the 2ψB definition.</p>

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