Experimental details of electrical detection of electron-spin-resonance (ESR) spectroscopy on semiconductor devices

UMEDA Takahide

doi:10.11470/oubutsu.93.2_120

Bibliographic Information

Other Title

電流検出ESRによるSiC中の欠陥検出のための＋<i>α</i> の研究技術
An example of silicon carbide metal-oxide-semiconductor field-effect transistors (4H-SiC MOSFETs)

Abstract

<p>Electron-spin-resonance (ESR) spectroscopy is a powerful tool for studying point defects in semiconductor crystals. EDMR (electrically detected magnetic resonance) enables us to detect ESR signals in miniaturized semiconductor devices. Using EDMR, the authors have identified various interface defects at 4H-SiC/SiO₂ interfaces. This paper presents the details of our EDMR instrument and our EDMR experiments on 4H-SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) using the two typical examples: EDMR detections of a typical MOS interface defect (the P_bC center = interfacial carbon dangling-bond defect) and a typical spin defect (the T_V2a center = silicon vacancy) in 4H-SiC MOSFETs.</p>

Journal

Oyo Buturi

Oyo Buturi 93 (2), 120-124, 2024-02-01

The Japan Society of Applied Physics

Details 詳細情報について

CRID: 1390580472188597376

DOI: 10.11470/oubutsu.93.2_120

ISSN: 21882290; 03698009

Text Lang: ja

Data Source

JaLC

Abstract License Flag: Disallowed

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