A Study of Complementary Logic Circuits Using SiC JFETs for Operation in High-Temperature Environments

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  • 高温環境での動作を可能にするSiC JFETを用いた相補型論理回路の研究

Abstract

This paper describes our recent sudies on SiC complementary JFET logic gates for high-temperature IC. Ion implantation allows us to form p- and n-type regions in SiC high-purity semi-insulating substrates. SiC JFETs were fully formed by ion implantation. The SiC CJFET inverter operates from 300 to 623 K with a 1.4 V supply voltage. The logic threshold voltage shift is as low as 0.2 V from 300 to 623 K. Their dynamic operation can be explained by a device model of SiC p- and n-JFETs. The static power consumption is quite small owing to its complementary operation in a similar manner of CMOS circuits.

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