Why is the electron mobility of organic semiconductors lower than the hole mobility?

DOI

Bibliographic Information

Other Title
  • 有機半導体の電子移動度（n型特性）はなぜ正孔移動度（p型特性）に比べて低いのか？
  • First observation of the conduction band structure and establishment of the partial polaron model
  • 伝導帯バンド構造の実測と部分ポーラロンモデルによる解明

Abstract

<p>In organic semiconductors, electron mobilities are lower than hole mobilities. It has not been clear whether this is due to extrinsic factors, such as the electron trap formed by the atmosphere, or the electron mobility is inherently low. We developed angle-resolved low-energy inverse photoelectron spectroscopy and succeeded in measuring the energy band structure (the energy-momentum relation) of the conduction band of organic semiconductor for the first time. Through analysis of the bandwidth, we clarified that the polaron is formed and proposed a new model called partially-dressed polaron. Based on this model, we employed the wave packet diffusion method to calculate the mobilities and proved that the electron mobility is inherently lower than the hole mobility due to the electron-phonon interaction.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 93 (5), 284-288, 2024-05-01

    The Japan Society of Applied Physics

Details 詳細情報について

  • CRID
    1390581468909768192
  • DOI
    10.11470/oubutsu.93.5_284
  • ISSN
    21882290
    03698009
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

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