Organic Photodiode Materials for Near-Infrared and Short-Wave Infrared Light Detection

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Other Title
  • 近赤外光・短波赤外光検出用有機光ダイオード材料の開発

Description

<p>We report on new materials for solution-processable organic photodiodes (OPDs) for near-infrared (NIR) and short-wave infrared (SWIR) detection compatible with CMOS image sensors. We selected a conventional structure (p-i-n) with a polymeric hole transport layer (HTL) that we originally made for organic light-emitting diodes. The HTL is free from acids and dopants, contributing to excellent device stability. The average roughness of the HTL on a 8-inch SiO2/Si wafer is less than 3 nm. For infrared sensing materials in the active layer, we developed novel non-fullerene acceptors (NFAs). An OPD targeting 940 nm achieved an external quantum yield (EQE) of 80% at the wavelength with a dark current in the order of 1×10－6 mA/cm－2 at －5 V. Another OPD targeting SWIR achieved EQE of 45％ at 1,100 nm with a dark current of 4×10－5 mA/cm－2 at －5 V. Novel NFAs targeting even longer wavelengths are under development.</p>

Journal

  • POLYMERS

    POLYMERS 73 (2), 67-68, 2024

    The Society of Polymer Science, Japan

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