Optimization of Type-II AlAs/AlInAs/GaAsSb Heterostructure at 1550 nm Under wWell-Width Variation

DOI 機関リポジトリ (HANDLE) オープンアクセス
  • Priya Chaudhary
    Department of Electronics and Communication Engineering, Manipal University Jaipur
  • Rathi Amit
    Department of Electronics and Communication Engineering, Manipal University Jaipur
  • Amit Kumar Singh
    Department of Electronics and Communication Engineering, Manipal University Jaipur
  • Md. Riyaj
    Department of Electronics and Communication Engineering, Vidya Vihar Institute of Technology

書誌事項

タイトル別名
  • Optimization of Type-II AlAs/AlInAs/GaAsSb Heterostructure at 1550 nm Under Well-Width Variation

説明

A W-shaped type-II AlAs/Al_<0.3>In_<0.7>As /GaA_s_<0.1>Sb_<0.9> lasing nanoscale heterostructure is designed for near infrared emission. The Luttinger kohn 6*6 model is used to compute wavefunctions, dispersion, matrix elements and then optical gain. The calculated optical gain for x polarization of light is found under variable well widths. For injected carrier concentration of 2.5×10^<12> /cm^2, gain of 12560/cm is attained at a wavelength of 1550 nm for 2 nm quantum well width. Such a structure can be regarded as new because of its high optical gain with low attenuation at 1550 nm, which makes it useful for optoelectronics.

収録刊行物

  • Evergreen

    Evergreen 11 (3), 1882-1891, 2024-09

    九州大学グリーンテクノロジー研究教育センター

キーワード

詳細情報 詳細情報について

  • CRID
    1390583238591083008
  • DOI
    10.5109/7236839
  • ISSN
    24325953
    21890420
  • HANDLE
    2324/7236839
  • 本文言語コード
    en
  • データソース種別
    • JaLC
    • IRDB
    • Crossref
  • 抄録ライセンスフラグ
    使用可

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