Strain Analysis Using STEM Moiré Method

DOI Web Site

Bibliographic Information

Other Title
  • STEMの走査線と結晶格子によるモアレ縞による歪の計測
  • STEM ノ ソウサセン ト ケッショウ ゴウシ ニ ヨル モアレジマ ニ ヨル ヒズミ ノ ケイソク

Search this article

Description

<p>Strain measurement using a moiré fringe in scanning transmission electron microscopy (STEM) is reported. The moiré fringe in STEM arises as an interference fringe of a crystal lattice and a scanning raster, due to under-sampling effect. The moiré spacing is magnified with the factor determined by the ratio of the raster spacing with respect to crystal lattice spacing, when they are parallel. The width of the fringe is controllable, since we can arbitrarily select the spacing and direction of the raster. The strain map of the crystal is calculated with the phase shift of the moiré fringe.  And the calculation is based on a phase analysis procedure developed for holography. The specimen drift compensation, using a non-strained reference region, was applied to improve the final accuracy. And the averaging of resulted multiple phase maps derived from moiré patterns was also applied to the final results to improve the accuracy. The accuracy of the strain map, examined with a non-strained Si crystal, was approximately 0.2 % in standard deviation of the strain map with a spatial resolution of several nanometers.</p>

Journal

  • KENBIKYO

    KENBIKYO 49 (3), 226-230, 2014-12-30

    The Japanese Society of Microscopy

Keywords

Details 詳細情報について

Report a problem

Back to top