Zero Current Electrochemical Impedance Spectrometry for the Study of Si Substrate Depletion Layer

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<p>A careful study of the impedance at zero current of a silicon substrate in a semiconductor/oxide/electrolyte (SOE) structure permitted to identify the contribution of the depletion layer under various bias potentials. Modelling the equivalent circuit proved that the imaginary component was a pure capacitor C in parallel with a pure resistance R. Experimental data showed that these two components undergo a steep variation when the system approaches the silicon flat band potential situation. A theoretical development is presented under the assumption that the gradient of potential inside the material is small enough for a simplified treatment based on the linearization of the exponential function. The steep increase in the vicinity of the flat band potential of the space charge capacitance and the conductance was confirmed. It constitutes a useful tool for electrochemical studies to determine the band level curvature as a function of the sample potential measured vs. a reference electrode.</p>

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  • Electrochemistry

    Electrochemistry 70 (8), 609-614, 2002-08-05

    公益社団法人　電気化学会

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