Heterogeneous integration of vertical III-V nanowires on Si and their transistor applications
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- TOMIOKA Katsuhiro
- Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
Bibliographic Information
- Other Title
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- III-V族化合物半導体ナノワイヤトランジスタ集積技術
- Ⅲ-Ⅴ ゾク カゴウブツ ハンドウタイ ナノワイヤトランジスタ シュウセキ ギジュツ
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Abstract
<p>We report on the recent progress in electronic applications using III-V nanowires (NWs) on Si by using a selective-area growth method. This method could align vertical III-V NWs on Si under specific growth conditions. The detailed studies on III-V NW/Si hetero-interfaces showed the possibility for achieving coherent growth regardless of misfit dislocations in the III-V/Si heterojunction. The vertical III-V NWs were used for high performance vertical field-effect transistors (FETs). Furthermore, III-V NW/Si hetero-interfaces with fewer misfit dislocations provided us a unique band discontinuity with a new functionality that can be used for the application of tunnel diodes and tunnel FETs. These demonstrations could provide new approaches for creating low-power switches as building blocks of future nanoelectronics.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 88 (4), 245-251, 2019-04-10
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390845702281173376
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- NII Article ID
- 130007709428
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- NDL BIB ID
- 029666445
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed