Low-temperature and high-rate growth of epitaxial silicon by atmospheric-pressure plasma chemical vapor deposition

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  • YASUTAKE Kiyoshi
    Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Osaka University
  • KAKIUCHI Hiroaki
    Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Osaka University
  • OHMI Hiromasa
    Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Osaka University

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Other Title
  • 大気圧プラズマCVD法によるSiの低温・高速エピタキシャル成長
  • 最近の展望 大気圧プラズマCVD法によるSiの低温・高速エピタキシャル成長
  • サイキン ノ テンボウ タイキアツ プラズマ CVDホウ ニ ヨル Si ノ テイオン コウソク エピタキシャル セイチョウ

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Abstract

<p>Thin-film deposition using atmospheric-pressure plasma has attracted considerable attention as a low-cost deposition method, because a low temperature and high deposition rate without the use of ultrahigh vacuum are possible. Recently, it has been demonstrated that high-quality deposition without surface ion damage is also possible by this method. In this report, we introduce the application of atmospheric-pressure plasma chemical vapor deposition using a porous carbon electrode for Si epitaxial growth on a 4-inch (001) Czochralski (CZ)-Si wafer. The growth of an epitaxial Si film with higher quality than the CZ-Si is possible at 520-570°C with sufficiently high growth rates (0.22-0.35μm/min) for practical applications.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 76 (9), 1031-1036, 2007-09-10

    The Japan Society of Applied Physics

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