Response of semiconductor devices to radiation

DOI 16 References

Bibliographic Information

Other Title
  • 放射線による半導体デバイスへの影響
  • ホウシャセン ニ ヨル ハンドウタイ デバイス エ ノ エイキョウ

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Abstract

<p>Many radiation particles, such as electrons, protons and heavy ions, exist in space. The semiconductor devices installed in space applications, such as artificial satellites, exhibit destructive and nondestructive malfunctions owing to such radiation particles. The effects of a total ionizing dose, single event and displacement damage are known as three major effects of radiation on semiconductor devices. In this article, the response of triple junction (3J) solar cells to radiation is introduced as one of the examples of the displacement damage effects. The degradation mechanism of 3J solar cells is also discussed. As an example of single event effects, the single event transient observed for logic LSIs is introduced, which is one of the current major issues in logic LSIs for not only space but also terrestrial applications.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 81 (3), 216-219, 2012-03-10

    The Japan Society of Applied Physics

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Keywords

Details

  • CRID
    1390845702285787008
  • NII Article ID
    10030158643
  • NII Book ID
    AN00026679
  • DOI
    10.11470/oubutsu.81.3_216
  • ISSN
    21882290
    03698009
  • NDL BIB ID
    023566313
  • Text Lang
    ja
  • Data Source
    • JaLC
    • NDL
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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