Fabrication of lattice-matched quantum dot systems of GaAs/AlGaAs by droplet epitaxy and characterization of their optical properties

  • KOGUCHI Nobuyuki
    Nanomaterials Laboratory, National Institute for Materials Science
  • WATANABE Katsuyuki
    Nanomaterials Laboratory, National Institute for Materials Science Present Address : Institute of Industrial Science, University of Tokyo
  • MANO Takaaki
    Nanomaterials Laboratory, National Institute for Materials Science
  • KURODA Takashi
    Nanomaterials Laboratory, National Institute for Materials Science
  • SAKODA Kazuaki
    Nanomaterials Laboratory, National Institute for Materials Science

Bibliographic Information

Other Title
  • 格子整合系GaAs/AlGaAs量子ドットの液滴エピタキシーによる作製と光学特性評価
  • コウシ セイゴウケイ GaAs AlGaAs リョウシ ドット ノ エキテキ エピタキシー ニ ヨル サクセイ ト コウガク トクセイ ヒョウカ

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Description

<p>We have proposed a self-assembling growth method, termed droplet epitaxy, for the direct formation of quantum dots (QDs) in 1990.This method is very different from the ordinary method based on the Stranski-Krastanow growth mode, which appears only in lattice-mismatched systems.This method is applicable to the formation of QDs not only in lattice-mismatched systems but also in lattice-matched systems.Moreover, by this method, we can fabricate QDs with or without a wetting layer and control certain QD shapes such as pyramidal and ring shapes.Here, we show our recent progress in the fabrication of lattice-matched quantum dot systems of GaAs/AlGaAs by droplet epitaxy and the characterization of their optical properties.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 74 (3), 343-348, 2005-03-10

    The Japan Society of Applied Physics

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