Development of ultraviolet light-emitting diodes based on zinc oxide and its materials science

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  • NAKAHARA Ken
    Advanced Compound Semiconductors R&D Center, ROHM CO. LTD.
  • KAWASAKI Masashi
    School of Engineering, University of Tokyo Advanced Institute for Materials Research, Tohoku University CREST-JST

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  • 酸化亜鉛紫外LEDの開発とその材料科学
  • サンカ アエン シガイ LED ノ カイハツ ト ソノ ザイリョウ カガク

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Abstract

<p>Ultraviolet light-emitting diodes (LEDs) were fabricated employing heteroepitaxial (MgZn)O/ZnO junctions grown by molecular beam epitaxy. Much effort was paid to grow clean and highly crystalline films through careful optimization of substrate cleaning, suitable choice of a substrate holder, and appropriate measurement of substrate temperature. The choices of ammonia as the nitrogen source and the Zn-polar surface of substrates have lead us to the success in fabricating p-type (MgZn)O. Near-band-edge electroluminescence (380nm) dominated the emission spectra and the output power reached 70μW at an injection current of 30mA.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 80 (4), 314-318, 2011-04-10

    The Japan Society of Applied Physics

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