Two-dimensional quantum transport in high-quality ZnO heterointerfaces

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  • 酸化亜鉛ヘテロ界面の高品質化と2次元量子輸送現象
  • サンカ アエン ヘテロ カイメン ノ コウヒンシツカ ト 2ジゲン リョウシ ユソウ ゲンショウ

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Abstract

<p>Zinc oxide, a wide gap semiconductor, has been intensively studied as a candidate for transparent conductors and ultraviolet light emitting diodes. In the course of this pursuit, we have developed growth techniques for high quality interfaces, and have attained the unexpected result of the formation of two-dimensional electrons exhibiting high mobility. The scattering probability of carriers, an index of the cleanness of the interface, is now comparable to that of the cleanest semiconductor, GaAs, due to a drastic reduction in the impurity content of films. In this article, the improvement and resultant quantum transport of ZnO thin films are presented. We conclude with the new physics of the quantum Hall effect and prospects for quantum devices based on two-dimensional electrons in ZnO.</p>

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  • Oyo Buturi

    Oyo Buturi 84 (11), 984-990, 2015-11-10

    The Japan Society of Applied Physics

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