Recent developments in SiC high-frequency devices

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  • SiC高周波電子デバイスにおける最近の研究動向
  • 最近の展望 SiC高周波電子デバイスにおける最近の研究動向
  • サイキン ノ テンボウ SiC コウシュウハ デンシ デバイス ニ オケル サイキン ノ ケンキュウ ドウコウ

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Abstract

<p>Silicon carbide (SiC) is a promising material for fabricating high-power and high-frequency devices because of its superior properties. SiC high-frequency devices are expected to be used for applications such as power amplifiers for base station transmitters and power modules for radar systems. We developed SiC-MESFETs and evaluated their DC and RF characteristics. In this paper, I will give the current status of the SiC high-frequency devices-SIT, JFET, BJT, and IMPATT diodes-that were developed by other institutions, and describe the experimental results obtained from the MESFETs that were developed by us.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 73 (3), 351-354, 2004-03-10

    The Japan Society of Applied Physics

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