Heteroepitaxial growth of GaN on Si substrate and its application to devices

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  • EGAWA Takashi
    Research Center for Nano-Device and System, Nagoya Institute of Technology

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  • Si基板上へのGaN単結晶の成長とデバイス応用
  • Si キバン ジョウ エ ノ GaNタンケッショウ ノ セイチョウ ト デバイス オウヨウ

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Abstract

<p>We have achieved a thick AlGaN/GaN HEMT on a Si substrate using a GaN/AlN multilayer. The multilayer is effective in relaxing the stress in the upper GaN layer. The vertical and horizontal breakdown voltages increased with an increase in epitaxial layer thickness. A breakdown field of 2.3×106 V/cm was estimated from the vertical breakdown voltage. A horizontal breakdown voltage as high as 1813 V was obtained across a 10μm ohmic gap. We also reported the effect of deep pits on the breakdown of AlGaN/GaN HEMTs on Si. For devices with deep pits, the breakdown was greatly affected by the large leakage through the buffer and substrate. A cross-sectional transmission electron microscopy image revealed that deep pits originate from Si because of the Ga etching of the Si substrate during thermal cleaning. The three-terminal-off breakdown decreased rapidly as the density of deep pits increased. Both thick and pit-free epitaxial layers are important for the fabrication of a high-breakdown device.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 81 (6), 485-488, 2012-06-10

    The Japan Society of Applied Physics

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