Analysis of the IGBT with Improved Trade-off Characteristic between Conduction and Turn-off Losses

DOI

説明

In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/cm2) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.

収録刊行物

  • IEICE Proceeding Series

    IEICE Proceeding Series 39 P2-8-, 2008-07-07

    The Institute of Electronics, Information and Communication Engineers

キーワード

詳細情報 詳細情報について

  • CRID
    1390845702290277888
  • NII論文ID
    230000007636
  • DOI
    10.34385/proc.39.p2-8
  • ISSN
    21885079
  • 本文言語コード
    en
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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