Thermodynamic analysis of compound semiconductors by vapor phase epitaxy

DOI Web Site 28 References
  • KOUKITU Akinori
    SRI for Future Nano -Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology
  • KANGAWA Yoshihiro
    Division of Fundamental Mechanics, Research Institute for Applied Mechanics, Kyushu University
  • KUMAGAI Yoshinao
    SRI for Future Nano -Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology
  • SEKI Hisashi
    Tomoe Shokai Co., Ltd.

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Other Title
  • 化合物半導体気相成長の熱力学
  • カゴウブツ ハンドウタイ キソウ セイチョウ ノ ネツリキガク

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Abstract

<p>An analysis of element incorporation from a thermodynamic viewpoint is described for vapor phase epitaxy (molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE)) of III-V semiconductors. The driving force of binary compounds and the vapor-solid distribution relationship for ternary and quaternary alloys are discussed in comparison with the experimental data reported in the literature. It is shown that the growth rate and alloy composition are thermodynamically controlled under conventional growth conditions. The thermodynamically predicted orders in which binary compounds are incorporated into alloys are very similar for all vapor phase epitaxial methods, and the order is essentially governed by the Gibbs free energy of formation of the binary semiconductors irrespective of the growth method.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 74 (5), 561-572, 2005-05-10

    The Japan Society of Applied Physics

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