Widegap semiconductor electronics

DOI

Bibliographic Information

Other Title
  • ワイドギャップ半導体エレクトロニクス

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Abstract

<p>Wide-band-gap semiconductors such as SiC, C (diamond), GaN (or the family of III-V nitrides) and ZnO have attracted much attention for their potential use in future electronics because of their excellent properties that overcome the limits of conventional semiconductors such as Si and GaAs. Future developments expected in this field (wide-band-gap semiconductor electronics) are shown in a main roadmap focusing on material preparation, device technology and industrial applications. Furthermore, to show the benefits of wide-band-gap semiconductors, sub-roadmaps have been prepared for the four selected fields of application : information and communication electronics, energy electronics, hostile-environment electronics and bio- and medical electronics.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 79 (8), 712-713, 2010-08-10

    The Japan Society of Applied Physics

Details 詳細情報について

  • CRID
    1390845702290794496
  • NII Article ID
    10026494756
  • NII Book ID
    AN00026679
  • DOI
    10.11470/oubutsu.79.8_712
  • ISSN
    21882290
    03698009
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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