Mist chemical vapor deposition for thin-film deposition at atmospheric pressure to move toward a green process for oxide-based electronics

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  • KAWAHARAMURA Toshiyuki
    System Engineering, Kochi University of Technology Center for Nanotechnology, Research Institute, Kochi University of Technology
  • FURUTA Mamoru
    Environmental Science and Engineering, Kochi University of Technology Center for Nanotechnology, Research Institute, Kochi University of Technology

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Other Title
  • ミスト化学気相成長法を用いた大気圧薄膜形成と酸化物機能デバイスのグリーンプロセス化
  • ミスト カガク キソウ セイチョウホウ オ モチイタ タイキアツ ハクマク ケイセイ ト サンカブツ キノウ デバイス ノ グリーンプロセスカ

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Abstract

<p>Wide-gap semiconductors have great potential for achieving “green” electric and energy devices. In addition, an atmospheric pressure (AP) process is also expected to be a green process that replaces conventional vacuum-based processes. Because oxide wide-gap materials are air-stable and easy to form using an AP process, several kinds of oxide materials and devices have been demonstrated through solution-based AP processes. Here, we will present mist chemical vapor deposition, which is a solution-based AP deposition method for thin-film deposition and its application to oxide thin-film transistors, as a move toward a green process for oxide-based electronics.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 83 (9), 747-751, 2014-09-10

    The Japan Society of Applied Physics

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