Investigation of contrast reversal phenomenon in SEM images under low incident acceleration voltage using AES

DOI

Bibliographic Information

Other Title
  • AESを利用した極低入射電圧SEM像におけるコントラスト反転現象の解明

Description

<p>In recent years, SEM has made it possible to acquire a backscattered electron (BSE) compositional image of the sample surface at a low incident voltage of 1 kV or less. However, the contrast of the composition image does not necessarily correspond to the average atomic number or density of the sample, and a phenomenon is also observed in which the composition contrast is reversed compared to that obtained at the conventional incident voltage of several kV or more. In this study, we tried to elucidate the contrast reversal phenomenon by examining the incident voltage dependence of the spectral intensity of BSE forming the composition image by using AES.</p>

Journal

Details 詳細情報について

  • CRID
    1390845702305215104
  • NII Article ID
    130007737519
  • DOI
    10.14886/jvss.2019.0_1p57
  • ISSN
    24348589
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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