Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes
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- Ariyoshi Tetsuya
- Center for Microelectronic Systems, Kyushu Institute of Technology
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- Iwasa Jumpei
- Center for Microelectronic Systems, Kyushu Institute of Technology
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- Takane Yuta
- Center for Microelectronic Systems, Kyushu Institute of Technology
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- Sakamoto Kenji
- Center for Microelectronic Systems, Kyushu Institute of Technology
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- Baba Akiyoshi
- Center for Microelectronic Systems, Kyushu Institute of Technology
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- Arima Yutaka
- Center for Microelectronic Systems, Kyushu Institute of Technology
説明
<p>A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.</p>
収録刊行物
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- IEICE Electronics Express
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IEICE Electronics Express 15 (11), 20180177-20180177, 2018
一般社団法人 電子情報通信学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390845712967492352
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- NII論文ID
- 130007395665
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- ISSN
- 13492543
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
