Observation of Interface between Thermoelectric Material Zn₄Sb₃ and Electrodes by Resistance Scanning and Seebeck Coefficient Mapping Techniques

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  • Kunioka H.
    Department of Materials Science and Technology, Tokyo University of Science Department of Energy and Environment, Research Institute for Energy Conservation, National Institute of Advanced Industrial Science and Technology
  • Obara H.
    Department of Energy and Environment, National Institute of Advanced Industrial Science and Technology
  • Yamamoto A.
    Department of Energy and Environment, Research Institute for Energy Conservation, National Institute of Advanced Industrial Science and Technology
  • Iida T.
    Department of Materials Science and Technology, Tokyo University of Science

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タイトル別名
  • Observation of Interface between Thermoelectric Material Zn<sub>4</sub>Sb<sub>3</sub> and Electrodes by Resistance Scanning and Seebeck Coefficient Mapping Techniques

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<p>A ready-for-soldering thermoelectric element composed of Zn4Sb3 with Ni–Al diffusion barrier layer and Cu electrode was fabricated by means of a hot-press method. Batch-to-batch variation of the resistance of the element was within 7%, the average resistance was 3.23 mΩ and the standard deviation 0.25 mΩ. Annealing effects on the interface structure between the electrodes and Zn4Sb3 were investigated using microprobe techniques such as Seebeck coefficient mapping and resistance scanning. The element showed lower Seebeck coefficient and resistivity than those of the pristine Zn4Sb3 without the electrodes. After annealing for 3.6 ks, the Seebeck coefficient and resistivity returned to the intrinsic values of Zn4Sb3. Increased resistivity was clearly observed near electrode/Zn4Sb3 interfaces of all annealed samples. Seebeck coefficient maps also indicated variation near the interfaces, showing good consistency with the resistance variation.</p>

収録刊行物

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 59 (7), 1035-1040, 2018-07-01

    公益社団法人 日本金属学会

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