Energy resolved secondary electron imaging of semiconductor pn junctions using fountain detector

Bibliographic Information

Other Title
  • 噴水検出器による半導体pn接合のエネルギー分解二次電子像

Description

We have developed low energy secondary electron (SE) detector for outlens-type scanning electron microscope and named it as fountain detector (FD). Using this FD, we observed pn-junctions in SiC. p-region is darker than n-region in SE images lower than 2 eV, while brighter in those images higher than 2 eV. The comparison of SE spectra indicates the SE spectrum of p-region shifts about 2 eV higher than that of n-region. This FD may open up the new surface potential imaging using low energy SEs.

Journal

Details 詳細情報について

  • CRID
    1390845713022380416
  • NII Article ID
    130007519105
  • DOI
    10.14886/sssj2008.2018.0_10
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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