- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Automatic Translation feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Energy resolved secondary electron imaging of semiconductor pn junctions using fountain detector
-
- Sekiguchi Takashi
- Univ. Tsukuba
-
- Agemura Toshihide
- Univ. Tsukuba
-
- Hideo Iwai
- NIMS
Bibliographic Information
- Other Title
-
- 噴水検出器による半導体pn接合のエネルギー分解二次電子像
Description
We have developed low energy secondary electron (SE) detector for outlens-type scanning electron microscope and named it as fountain detector (FD). Using this FD, we observed pn-junctions in SiC. p-region is darker than n-region in SE images lower than 2 eV, while brighter in those images higher than 2 eV. The comparison of SE spectra indicates the SE spectrum of p-region shifts about 2 eV higher than that of n-region. This FD may open up the new surface potential imaging using low energy SEs.
Journal
-
- Abstract of annual meeting of the Surface Science of Japan
-
Abstract of annual meeting of the Surface Science of Japan 2018 (0), 10-, 2018
The Japan Society of Vacuum and Surface Science
- Tweet
Details 詳細情報について
-
- CRID
- 1390845713022380416
-
- NII Article ID
- 130007519105
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- CiNii Articles
-
- Abstract License Flag
- Disallowed
