2P1-11 A Study of the Recombination Process at the p-n Junction Interface by the Photoexcited-Carrier-Concentration Controlled Piezoelectric Photothermal Method(Poster Session)

Bibliographic Information

Other Title
  • 2P1-11 光励起キャリア数を制御した圧電素子光熱変換分光法による半導体p-n接合界面の研究(ポスターセッション)

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Details 詳細情報について

  • CRID
    1390845713024215168
  • NII Article ID
    110007721672
  • DOI
    10.24492/use.30.0_223
  • ISSN
    24331910
    13488236
  • Text Lang
    en
  • Data Source
    • JaLC
    • CiNii Articles

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