酸化亜鉛半導体のエピタキシャル成長の現状

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  • Epitaxial Growth of ZuO thin films
  • サンカ アエン ハンドウタイ ノ エピタキシャル セイチョウ ノ ゲンジョウ

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ZnO epitaxial films on single crystal sapphire and ZnO substrates were prepared using lowpressure MO-CVD with zinc acetylacetonate (Zn(C5H7O2)2) and oxygen as source materials. Heteroepitaxial growth was achieved on a, c and r-face single crystal sapphire substrates. Sapphire is used extensively as the substrate for epitaxial growth of ZnO films because of its low cost and high crystalline quality. However, crystallinity and electrical properties of epitaxial films grown on sapphire substrate are very poor because of the large lattice mismatch between ZnO and sapphire substrate. Homo-epitaxial films were grown on the ZnO substrates prepared by the hydrothermal method. Atomic force microscopy (AFM) was used for observation of surface morphology of the epitaxial film and the ZnO substrate. Many scratches caused by polishing surface were observed on the Zn-terminated (+c) face. On the ZnO surface with scratches, the ZnO film was grown as a mixture of two-dimensional and three-dimensional growth mode with random nucleation.

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