-
- Inoue Isao H.
- 産業技術総合研究所
Bibliographic Information
- Other Title
-
- RRAMの原理はどこまで理解できたのか? (解説)
- RRAMの原理はどこまで理解できたのか?
- RRAM ノ ゲンリ ワ ドコ マデ リカイ デキタ ノ カ?
Search this article
Abstract
Resistive random access memory (RRAM) is an ideal memory device for the era of "internet of Things" due to its low power consumption, suitability for miniaturization, high speed data processing, and compatibility to CMOS technology. Naively, all the metal/insulator/metal capacitor-like device can work as RRAM by a soft breakdown called electroforming, if it forms a current constriction structure (faucet) or an interface barrier. The importance of those built-in structures is explained in this review. RRAM is classified into four types based on the current-voltage characteristics. They are fuse/antifuse-type (digital type) nonpolar and bipolar RRAMs, memristor-type RRAM, and continuous-type (analog-type) bipolar RRAM. Suggested mechanisms of these four types of RRAM are also reviewed.
Journal
-
- Butsuri
-
Butsuri 70 (11), 814-823, 2015-11-05
The Physical Society of Japan
- Tweet
Details 詳細情報について
-
- CRID
- 1390845713088572032
-
- NII Article ID
- 110010000873
-
- NII Book ID
- AN00196952
-
- ISSN
- 24238872
- 00290181
-
- NDL BIB ID
- 026839496
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- CiNii Articles
-
- Abstract License Flag
- Disallowed