Present Status of RRAM Research

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Other Title
  • RRAMの原理はどこまで理解できたのか? (解説)
  • RRAMの原理はどこまで理解できたのか?
  • RRAM ノ ゲンリ ワ ドコ マデ リカイ デキタ ノ カ?

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Abstract

Resistive random access memory (RRAM) is an ideal memory device for the era of "internet of Things" due to its low power consumption, suitability for miniaturization, high speed data processing, and compatibility to CMOS technology. Naively, all the metal/insulator/metal capacitor-like device can work as RRAM by a soft breakdown called electroforming, if it forms a current constriction structure (faucet) or an interface barrier. The importance of those built-in structures is explained in this review. RRAM is classified into four types based on the current-voltage characteristics. They are fuse/antifuse-type (digital type) nonpolar and bipolar RRAMs, memristor-type RRAM, and continuous-type (analog-type) bipolar RRAM. Suggested mechanisms of these four types of RRAM are also reviewed.

Journal

  • Butsuri

    Butsuri 70 (11), 814-823, 2015-11-05

    The Physical Society of Japan

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