書誌事項
- タイトル別名
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- Study of Reversal Contrast Phenomenon in SEM Images at Low Incident Accelerating Voltage by AES
- ゴクテイ ニュウシャ デンアツ SEMゾウ ニ オケル コントラスト ハンテン ゲンショウ ノ カイメイ
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説明
<p>Recently it has become possible for SEM to obtain a backscattered electron image (BEI) at low incident voltages of 1 kV or less. However, it was reported that some brightness in the BEI acquired at low incident voltages was not always proportional to the average atomic number of the sample. In this study, we investigated contrast reversal phenomena of two elements (C and Au) in BEIs using backscattered electrons acquired by Auger electron spectroscopy (AES) at an incident voltage of about 1 kV.</p>
収録刊行物
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- 表面と真空
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表面と真空 63 (6), 294-297, 2020-06-10
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390848250116570112
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- NII論文ID
- 130007853636
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- NII書誌ID
- AA12808657
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- ISSN
- 24335843
- 24335835
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- NDL書誌ID
- 030486858
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
