Pressure Effects on Magnetic and Transport Properties in CoFe-Based Spin Valve

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  • Mitsuda Akihiro
    Department of Physics, Kyushu University Research Center for Quantum Nano-Spin Sciences, Kyushu University
  • Kaneda Motoki
    Department of Physics, Kyushu University
  • Matsutomo Kanta
    Department of Physics, Kyushu University
  • Kimura Takashi
    Department of Physics, Kyushu University Research Center for Quantum Nano-Spin Sciences, Kyushu University
  • Yuasa Hiromi
    Research Center for Quantum Nano-Spin Sciences, Kyushu University Graduate School of Information Science & Electrical Engineering, Kyushu University

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Abstract

<p>We have studied the magnetoresistance of an enhanced-biased spin valve device under high pressure. The magnetoresistance decreases by 0.0014 up to 2 GPa with increasing pressure, which is inferred to be due to slight deviation from an antiparallel-spin configuration of the free and pinned layers. In the pressure range between 2 and 2.75 GPa, the exchange bias field generated in the pinned layer decreases and the coercivity of the free layers clearly increases by ∼5 Oe, which is likely to be related to less hydrostatic pressure.</p>

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 61 (8), 1483-1486, 2020-07-01

    The Japan Institute of Metals and Materials

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