書誌事項
- タイトル別名
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- Investigation on Suitable Structure for Laser Oscillation in Eu-doped GaN with Two-Dimensional Photonic Crystal Nanocavities
- Eu テンカ GaN レーザ ハッシン ニ ムケタ 2ジゲン フォトニック ケッショウ ヒカリ ナノ キョウシンキ コウゾウ ノ ケントウ
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説明
<p>III-nitride semiconductors with wide-bandgap energy are promising materials for optoelectronic devices. Particularly, blue and green light-emitting diodes (LEDs) based on InGaN/GaN multi quantum wells are commercially available at present. To realize a highly-efficient red LED, we have focused on Eu-doped GaN (GaN:Eu) and demonstrated GaN:Eu-based LED (maximum external quantum efficiency of 9.2%) with a high output power of 1.25 mW at 20 mA. As a next challenge of GaN:Eu-based optical devices, we have paid attention to fabricate laser diodes (LDs). In this paper, we focus on two-dimensional photonic crystal (2D-PhC) nanocavities with high-Q-factors and extremely small modal volumes as a prominent candidate towards laser oscillation. Based on finite-difference time-domain (FDTD) simulations, photonic band structures of 2D-PhC with hexagonal air-holes, which are suitable for wurtzite crystals, and possibility of laser oscillation of GaN:Eu are investigated. We find that appropriate lattice constants and radii of the air-holes form sufficiently-wide photonic bandgap like the case of circular air-holes conventionally used for cubic crystals. Then, we choose the line-defect cavity (LN cavity), widely used in 2D-PhC LDs, as nanocavity structures, and the Q-factors and material gain thresholds (gth), which are at least required material gain for GaN:Eu lasing, are calculated. We clarify that long cavities show high Q-factors and low gth. For a L6 cavity, the gth is calculated to be 12 cm-1, which is lower than experimentally estimated optical gain of GaN:Eu at room temperature (19 cm-1). This result indicates that appropriate 2D-PhC cavity-design allows laser oscillation of GaN:Eu.</p>
収録刊行物
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- 材料
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材料 69 (10), 721-726, 2020-10-15
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390849376465003392
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- NII論文ID
- 130007927961
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 030702904
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- 本文言語コード
- ja
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