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- NAKAMURA Atsutomo
- Department of Materials Physics, Nagoya University
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- OSHIMA Yu
- Department of Materials Physics, Nagoya University
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- MATSUNAGA Katsuyuki
- Department of Materials Physics, Nagoya University
Bibliographic Information
- Other Title
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- 暗闇における無機半導体の異常な室温可塑性と変形に伴う物性変化
- クラヤミ ニ オケル ムキ ハンドウタイ ノ イジョウ ナ シツオン カソセイ ト ヘンケイ ニ トモナウ ブッセイ ヘンカ
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Description
<p>Inorganic semiconductors tend to fail in a brittle manner when subjected to an external force. Such poor mechanical properties limit their application range. Recently, we report extraordinary plasticity in an inorganic semiconductor, ZnS in darkness. Room-temperature deformation tests of ZnS were performed under varying light conditions. ZnS crystals immediately fractured when they deformed under light. On the other hand, it was found that ZnS crystals can be plastically deformed up to a plastic strain of 45 % in darkness. In addition, the optical band-gap of the deformed ZnS was decreased by 0.6 eV. These results suggest that dislocations in ZnS become extremely mobile in darkness and that multiplied dislocations can affect the optical band-gap over the whole crystal.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 90 (3), 176-179, 2021-03-05
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390850247498800896
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- NII Article ID
- 130007995027
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- NDL BIB ID
- 031329533
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed