書誌事項
- タイトル別名
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- Improvement of Thermal-Type MEMS Flow Sensor Chip via New Process of Silicon Etching with Sacrificial Polycrystalline Silicon Layer
- ギセイソウ Poly-Siマク オ ヘイヨウ シタ シリコンエッチングプロセス ニ ヨル ネツシキ MEMS フローセンサチップ ノ セイノウ コウジョウ
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抄録
<p>This paper reports upon a new process for the flow sensor fabrication of a thermal microelectromechanical systems (MEMS) and its performance improvement. A unique feature of the proposed process is the silicon etching, which is a combination of normal crystal-oriented silicon etching and isotropic etching of polycrystalline silicon (poly-Si). The poly-Si layer works as a sacrificial layer and promotes etching of the silicon substrate in the horizonal direction, thereby enabling location of the etching holes in the membrane of the flow sensor without the conventional etching rules. Some designs for the flow sensors, which have been infeasible with normal processes, were thus fabricated and evaluated. Hence, the new process improves the design flexibility of the membrane and enhances flow sensor performance, such as 38.3% reduction in power consumption.</p>
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 141 (7), 207-214, 2021-07-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390851497213515648
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- NII論文ID
- 130008060175
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 031604932
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可