Technologies for large-diameter SiC crystal growth and application of process informatics

DOI

Bibliographic Information

Other Title
  • 大口径SiCバルク結晶成長における主要技術とプロセス・インフォマティクスの活用

Description

<p>  We have been developing a SiC crystal growth technique using the solution method. As a result, we have achieved the growth of ultra-high quality crystals with extremely low dislocation density. The key to this is the reduction of dislocation density by utilizing the macro-step dislocation conversion phenomenon and the suppression of surface morphology roughness by controlling the flow in the solution. In order to put these technologies to practical use, we have developed a new machine learning technique for optimizing crystal growth conditions for large-diameter crystals. In this method, a model is constructed in the computer that reproduces the actual experiment quickly and accurately, and then hundreds of thousands or millions of trials are performed using the model to derive the experimental conditions with high efficiency. This means that optimization by surrogate models, which is one of the methods of process informatics, has been realized in crystal growth. By using these techniques, we were able to achieve 6-inch crystal growth in a very short time.</p>

Journal

Details 詳細情報について

  • CRID
    1390852870561405824
  • NII Article ID
    130008110708
  • DOI
    10.19009/jjacg.48-3-04
  • ISSN
    21878366
    03856275
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

Report a problem

Back to top