Zn_3P_2の合成と気相ブリッジマン法による結晶成長

春日 正伸, 遠藤 乾一, 加納 徹, Kasuga Masanobu, Endo Kenichi, Kano Toru

doi:10.34429/00001841

Zn_3P_2の合成と気相ブリッジマン法による結晶成長

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書誌事項

タイトル別名

Synthesis and Crystal Growth of Zn_3P_2 by Vapor Phase Bridgeman Method
Zn_3P_2 ノゴウセイトキショウブリッジマンホウニヨルケッショウセイチョウ
Zn3P2 ノゴウセイトキソウブリッジマンホウニヨルケッショウ

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Single crystal boules of zinc phosphide (Zn_3P_2), a promising semiconductor material for photovoltaic cells, were prepared by vapor phase synthesis and vapor phase Bridgman method. Employing different temperature profile and furnace moving speed for nucleation stage and growth stage is essential to obtain large crystal grains of good quality. The boules grown were 10mm in diameter and 30mm long which were found ot consist of grains of at least 3mm in diameter by X-ray Laue method and diffractometry. The resistivity of the as grown crystals were of the order of 10^8 Ω-cm and could be reduced to less than 10 Ω-cm by silver doping.