極低窒素濃度化合物半導体混晶におけるアイソエレクトロニックトラップによる発光に関する研究<研究成果報告>

DOI 機関リポジトリ

書誌事項

タイトル別名
  • Photoluminescence from Isoelectronic Traps in Dilute Nitride Semiconductor Alloys
公開日
2006
資源種別
departmental bulletin paper
DOI
  • 10.24561/00016126
公開者
埼玉大学工学部

この論文をさがす

説明

We have studied the photoluminescence from isoelectonic traps in dilute GaAsN alloys. A number of sharp luminescence peaks due to nitrogen pairs and their phonon replicas were observed. The energy differences between the luminescence peaks and phonon replicas were 36 meV, which is in agreement with the energy of the longitudinal optical phonon at the Γ point . This indicates that the formation of isoelectronic traps is largely affected by the conduction band state at the Γ point in dilute GaAsN alloys. We have also investigated the temperature dependence of the photoluminescence related to isoelectronic traps. The energy shift of the luminescence peaks with increasing temperature is found to be almost the same as that of E0 gap of GaAs, also showing that the conduction band state at the Γ point significantly contributes to the formation of isoelectronic traps in dilute GaAsN alloys.

text

application/pdf

収録刊行物

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ