Basic Study of Oxide Film Planarization-CMP with Ceria Slurry

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  • セリアスラリーによる酸化膜の平坦化CMPに関する基礎的検討

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Ceria(CeO2) slurry has a strong merit in CMF polishing to give a high removal rate. However, it has an unfavorable reputation of problems linked to its quick sedimentation, agglomeration of particles, purity, difficult cleaning, and high cost. In the present study, focusing on the particular issue of the slurry dispersibility, we examined the effect ofultra-sonic (US) treatment ofslurry on its stability and its CMF polishing characteristics in order to make ceria slurry stably applicable to the planarizationCMF. As a result, the US treatment has proved remarkably effective in the elimination of agglomerates, improvement of slurry stability, increase of removal rate and better roughness, offering a breakthrough for the realization ofhigh performance ceria slurry for CMP planarization Comparing to silica slurry, we thus obtained ceria slurry that produces same polished roughness but six times higher removal rate when polished at the pressure of 500g/cm^2.

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