EVALUATON OF PROPERTIES OF Al DOPED CeO2 THIN FILMS DEPOSITED BY O2 INTRODUCED RF MAGNETRON SPUTTERING

DOI IR (HANDLE)

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Other Title
  • O2導入Arスパッタ法により形成したAl添加CeO2薄膜の特性評価

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Description

Cerium dioxide films doped with Al were deposited on p-type Si (100) wafers by radio frequency (RF) magnetron sputtering. The deposition was carried out at room temperature in an Ar +O2 atmosphere using the CeO2 target on which Al plates were bonded. Flow rate ratio of O2 was 2, 5 and 10 %. The post annealing was performed in an N2 atmosphere at 200 -600 °C. The electrical properties after annealing were characterized by I-V and C-V measurements. The leakage current at 3 MV/cm was minimized bellow 1.0×10-7 A/cm2for the sample deposited with 2 and 5% O2 introduction and annealed at 200 °C. The dielectric constant was increased with increasing amount of introduced O2. The leakage current and the dielectric constant were almost independent of the annealing temperature, but after annealing at 400 °C the leakage current increased by 3 orders of magnitude while dielectric constant decreased exceptionally. The transmission electron microscope, X-ray diffraction and X-ray photoelectron spectroscopy observations suggested the phase transition at this temperature.

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Details 詳細情報について

  • CRID
    1390853649760822016
  • NII Article ID
    120005611594
  • NII Book ID
    AA12677220
  • DOI
    10.15002/00011148
  • HANDLE
    10114/10452
  • ISSN
    21879923
  • Text Lang
    ja
  • Article Type
    departmental bulletin paper
  • Data Source
    • JaLC
    • IRDB
    • CiNii Articles
  • Abstract License Flag
    Allowed

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