- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- 【Updated on June 30, 2025】Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
300 GHz Power Amplifier and 120 Gb/s, 9.8 m Wireless Transmission Based on 80-nm InP-HEMT Technology
-
- HAMADA Hiroshi
- NTT Corporation
-
- TSUTSUMI Takuya
- NTT Corporation
-
- MATSUZAKI Hideaki
- NTT Corporation
-
- SUGIYAMA Hiroki
- NTT Corporation
-
- ITAMI Go
- NTT Corporation
-
- FUJIMURA Takuya
- Tokyo Institute of Technology
-
- ABDO Ibrahim
- Tokyo Institute of Technology
-
- SHIRANE Atsushi
- Tokyo Institute of Technology
-
- OKADA Kenichi
- Tokyo Institute of Technology
-
- SONG Ho-Jin
- NTT Corporation
-
- NOSAKA Hideyuki
- NTT Corporation
Bibliographic Information
- Other Title
-
- 80nm InP-HEMTテクノロジを用いた300GHz帯電力増幅器及び120Gb/s，9.8m無線伝送の実現
Description
We developed a 300-GHz power amplifier using the in-house 80-nm InP-HEMT technology. In the PA MMIC, the low-impedance inter-stage matching circuit, low-loss 8-way power combiner and backside DC line are used to reduce the RF loss and enhance the PA linearity. The PA module is fabricated by packaging the PA MMIC in WR3.4 waveguide module with low-loss, wideband ridge coupler. The PA module exhibits superior linearity, i.e., 20-dB-gain, 12-dBm-Psat, and 6.8-dBm-OP1dB at 296 GHz. A 300-GHz wireless transceiver is implemented using the PA module and it shows the record data rate of 120 Gb/s.
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390853650601387008
-
- ISSN
- 18810217
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
-
- Abstract License Flag
- Disallowed