Geを蒸着したSi(110)-16×2表面での特異な表面再構成構造

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  • Ge オ ジョウチャク シタ Si(110)-16 × 2 ヒョウメン デ ノ トクイ ナ ヒョウメン サイコウセイ コウゾウ
  • Unique surface structure formations on a Ge-covered Si(110)-16 × 2 surface

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Si-Ge structures forming new shapes on a Si(110)-16 × 2 reconstructed surface were investigated via scanning tunneling microscopy. Pyramidal-shaped Si–Ge nanoislands lying along the <1 11> directions were formed on the striped structure at high Ge coverage surface. However, when a single monolayer of Ge was deposited on the Si(110)-16 × 2 surface, single-domain of 16 × 2 striped structure disappeared, and a new double-domain striped structure was formed over the surface along directions that differed from original directions. This structure represents a new Si-Ge striped structure that forms by the mixing of Ge and Si due to high temperature annealing. These results indicate that the surface structure changes specifically with a trace of Ge.

identifier:http://repository.seikei.ac.jp/dspace/handle/10928/599

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