Fabrication of Vertical Schottky Barrier Diodes on β-Ga<sub>2</sub>O<sub>3</sub> Substrates Prepared by Vertical Bridgman Method
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- Lin Chiahung
- Novel Crystal Technology
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- Hoshikawa Keigo
- Shinshu Univ. Fujikoshi Machinery Corp.
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- Kajikura Atsushi
- Fujikoshi Machinery Corp.
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- Thieu Quang Tu
- Novel Crystal Technology
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- Thangaraja Amutha
- Novel Crystal Technology
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- Uchida Yuki
- Novel Crystal Technology
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- Koishikawa Yuki
- Novel Crystal Technology
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- Otsuka Fumio
- Novel Crystal Technology
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- Watanabe Shinya
- Novel Crystal Technology
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- Sasaki Kohei
- Novel Crystal Technology
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- Kuramata Akito
- Novel Crystal Technology
Bibliographic Information
- Other Title
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- VB法β-Ga<sub>2</sub>O<sub>3</sub>基板を用いた縦型ショットキーバリアダイオードの作製
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.1 (0), 3528-3528, 2020-02-28
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390855190121031296
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC