Growth of <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> on a-plane Sapphire Substrate by Tri-Halide Vapor Phase Epitaxy
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- Ema Kentaro
- Tokyo Univ. of Agric. and Tech.
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- Takekawa Nao
- Tokyo Univ. of Agric. and Tech.
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- Goto Ken
- Tokyo Univ. of Agric. and Tech.
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- Murakami Hisashi
- Tokyo Univ. of Agric. and Tech.
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- Kumagai Yoshinao
- Tokyo Univ. of Agric. and Tech.
Bibliographic Information
- Other Title
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- トリハライド気相成長法によるa面sapphire基板上への<i>ε</i>-Ga<sub>2</sub>O<sub>3</sub>成長
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2019.2 (0), 4037-4037, 2019-09-04
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390855765238563840
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC