Optical characterization of GaN layers homoepitaxially grown on a freestanding bulk GaN substrate by metal-organic chemical vapor phase epitaxy
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- Kojima Kazunobu
- IMRAM, Tohoku Univ.
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- Horikiri Fumimasa
- Sciocs Co. Ltd.
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- Narita Yoshinobu
- Sciocs Co. Ltd.
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- Yoshida Takehiro
- Sciocs Co. Ltd.
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- Chichibu Shigefusa
- IMRAM, Tohoku Univ.
Bibliographic Information
- Other Title
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- 有機金属気相成長法にて自立GaN基板上に成長させたGaNホモエピタキシャル層の光物性評価
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.1 (0), 3323-3323, 2018-03-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390856605462663808
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC