Thermodynamic Consideration of Nitride Semiconductor Growth Mechanism
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- Sekiguchi Kazuki
- Nagoya Univ.
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- Shirakawa Hiroki
- Nagoya Univ.
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- Chokawa Kenta
- Nagoya Univ.
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- Araidai Masaaki
- Nagoya Univ. IMaSS, Nagoya Univ.
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- Kangawa Yoshihiro
- RIAM, Kyushu Univ.
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- Kakimoto Koichi
- RIAM, Kyushu Univ.
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- Shiraishi Kenji
- Nagoya Univ. IMaSS, Nagoya Univ.
Bibliographic Information
- Other Title
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- 窒化物半導体成長メカニズムの熱力学的考察
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2016.2 (0), 3160-3160, 2016-09-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390858131658882944
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC