Intrinsic p-type behavior and effect of Al doping on power factor in CrSi<sub>2</sub> thermoelectric materials

DOI
  • Orita Takahiro
    Department of Materials Science and Engineering, Kyushu University Nippon Tungsten Co., Ltd.
  • Matsukawa Yuko
    Department of Materials Science and Engineering, Kyushu University
  • Ichino Kazuhiro
    Nippon Tungsten Co., Ltd.
  • Arita Makoto
    Department of Materials Science and Engineering, Kyushu University
  • Munetoh Shinji
    Department of Materials Science and Engineering, Kyushu University

Bibliographic Information

Other Title
  • CrSi<sub>2</sub>熱電材料におけるp型挙動の由来とAlドーピングが出力因子に与える影響

Abstract

<p>Chromium disilicide (CrSi2) is generally known as a p-type degenerate semiconductor whose power factor can be improved by substitution of Al on the Si site. However, it has not been clarified why holes are majority carriers in pure CrSi2 nor how the thermoelectric properties of CrSi2−xAlx depend on the temperature above 400 °C. In this paper, we prepared CrSi2−xAlx samples with x ranging from 0.00 to 0.20. The composition ratio in each sample measured by Wavelength-dispersive X-ray spectroscopy (WDX) showed that the sum of Si and Al to Cr was less than the stoichiometric ratio. The electronic density of states calculated by first principles calculation based on density functional theory revealed that the atomic vacancies on the Si sites, whose existence was implied by WDX, can supply holes. Comparing thermoelectric properties of the samples at 500 °C, the sample with nominal composition CrSi1.96Al0.04 showed the highest power factor 0.606 mW m−1 K−2.</p>

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Keywords

Details 詳細情報について

  • CRID
    1390860222068781568
  • DOI
    10.14957/fgms.36.13
  • ISSN
    21883807
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

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